Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties
Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties
复制标题
4H-SiC(0001)表面的超高温快速热氧化及SiO2/SiC界面特性的氧化温度依赖性
DOI：
10.1063/1.4967002
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发表时间：
2016
影响因子：
4
通讯作者：
Heiji Watanabe
中科院分区：
文献类型：
--
作者：
T. Hosoi;Daisuke Nagai;M. Sometani;Yoshihito Katsu;Hironori Takeda;T. Shimura;M. Takei;Heiji Watanabe
在干燥的O₂环境中，对4H - SiC(0001)表面在高达1700℃的温度下进行了超高温快速热氧化。热SiO₂层的反应受限线性生长速率的温度依赖性表明，即使在1600℃时，也是钝化氧化而非活性氧化占主导，其活化能估计为2.9 eV。我们还发现高温氧化有利于改善SiO₂/SiC界面性能，但冷却过程中的无意氧化会导致界面退化。通过有效抑制冷却过程中的氧化物生长，在1450℃形成的氧化物获得了最低的界面态密度。
Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces in dry O2 ambient was performed at temperatures up to 1700 °C. The temperature dependence of the reaction-limited linear growth rate of a thermal SiO2 layer revealed that not active but passive oxidation is dominant even at 1600 °C, and its activation energy was estimated to be 2.9 eV. We also found that high-temperature oxidation is beneficial in improving SiO2/SiC interface properties, but unintentional oxidation during the cooling down process causes interface degradation. By effectively suppressing the oxide growth during the cooling process, the lowest interface state density was obtained for the oxide formed at 1450 °C.