A varied shaping time noise analysis of Al0.8Ga0.2As and GaAs soft X-ray photodiodes coupled to a low-noise charge sensitive preamplifier
A varied shaping time noise analysis of Al0.8Ga0.2As and GaAs soft X-ray photodiodes coupled to a low-noise charge sensitive preamplifier
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DOI：
10.1016/j.nima.2012.01.009
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发表时间：
2012-05-01
影响因子：
1.4
通讯作者：
Ng, J. S.
中科院分区：
文献类型：
--
作者：
Barnett, A. M.;Lees, J. E.;Ng, J. S.
通过分析系统对来自信号发生器的脉冲的响应并改变系统的整形放大器的整形时间（从0.5 μ s到10 μ s），对影响连接到定制低噪声电荷敏感前置放大器的Al0.8Ga0.2As和GaAs光谱X射线光子计数p（+）-i-n（+）光电二极管的噪声源进行量化。在三个温度（-10 ℃、+20 ℃和+50 ℃）下对该系统进行了研究，以确定Al_（0.8）Ga_（0.2）As和GaAs二极管的元件噪声源和最佳成形时间随温度的变化。分析表明，该系统主要是由介电噪声，假设主要是从周围的封装检测器，两种类型的二极管和在每个温度下的限制。(C)2012爱思唯尔有限公司版权所有。
The noise sources affecting Al0.8Ga0.2As and GaAs spectroscopic X-ray photon counting p(+)-i-n(+) photodiodes connected to a custom low-noise charge sensitive preamplifier are quantified by analysing the system's response to pulses from a signal generator and varying the system's shaping amplifier's shaping time (from 0.5 mu s to 10 mu s). The system is investigated at three temperatures (-10 degrees C, +20 degrees C and +50 degrees C) in order to characterise the variation of the component noise sources and optimum shaping time with temperature for Al0.8Ga0.2As and GaAs diodes. The analysis shows that the system is primarily limited by dielectric noise, hypothesised to be mainly from the packaging surrounding the detector, for both types of diode and at each temperature. (C) 2012 Elsevier B.V. All rights reserved.