Thin film relaxation in cross‐sectional transmission electron microscopy specimens of GexSi1−x/Si strained‐layer superlattices
Thin film relaxation in cross‐sectional transmission electron microscopy specimens of GexSi1−x/Si strained‐layer superlattices
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GexSi1−x/Si 应变层超晶格横截面透射电子显微镜样品中的薄膜弛豫
DOI：
10.1063/1.113181
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发表时间：
1995
影响因子：
4
通讯作者：
X. Duan
中科院分区：
文献类型：
--
作者：
X. Duan
从GexSi1−x/Si应变层超晶格（SLS）的横截面样品中获得的具有精细衍射线的大角度会聚束电子衍射（LACBED）图可以提供有关局部应变和错配应力松弛的大量信息。GeSi层的衍射线与Si层的衍射线的位移可以用来确定应变弛豫。给出了薄膜弛豫随试样厚度变化的曲线。
A large‐angle convergent‐beam electron diffraction (LACBED) pattern with fine diffraction lines from a cross‐sectional specimen of GexSi1−x/Si strained‐layer superlattices (SLS) can give much information on local strain and misfit stress relaxation. The shift of the diffraction lines in the GeSi layers from those in the Si layers can be used to determine the strain relaxation. A profile of the thin film relaxation versus the specimen thickness is presented.