InGaN-based violet laser diodes
InGaN-based violet laser diodes
复制标题
DOI：
10.1088/0268-1242/14/6/201
复制
发表时间：
1999-06
影响因子：
1.9
通讯作者：
S. Nakamura
中科院分区：
文献类型：
--
作者：
S. Nakamura
通过使用InGaN有源层代替GaN有源层，已经获得了发射琥珀色、绿色、蓝色和紫外光的高效率发光二极管。InGaN有源层中In组分波动引起的局域能态似乎与InGaN基发光器件的高效率有关。采用横向外延生长的GaN，通过减少GaN与蓝宝石衬底界面处的大量穿透位错，成功制备了长寿命的紫色InGaN多量子阱/GaN/AlGaN分别限制异质结激光二极管（LD）。穿透位错通过增加阈值电流密度缩短了LD的寿命。具有解理镜面的LD在室温连续波（CW）工作下具有稳定的基横模，输出功率高达30 mW。在50 °C的环境温度下，连续工作时，LD在5 mW的恒定输出功率下的寿命估计约为3000 h。这些结果表明，这些LD已经可以用于许多真实的应用，例如数字通用盘、激光打印机、传感器和激发光源，作为具有高输出功率和高可靠性的商业产品。
High-efficiency light-emitting diodes emitting amber, green, blue and ultraviolet light have been obtained through the use of InGaN active layers instead of GaN active layers. The localized energy states caused by In composition fluctuation in the InGaN active layer seem to be related to the high efficiency of the InGaN-based emitting devices. Long-lifetime violet InGaN multi-quantum-well/GaN/AlGaN separate-confinement heterostructure laser diodes (LDs) were successfully fabricated using epitaxially laterally overgrown GaN by reducing a large number of threading dislocations originating from the interface between GaN and sapphire substrate. The threading dislocations shorten the lifetime of the LDs through an increase of the threshold current density. The LDs with cleaved mirror facets showed an output power as high as 30 mW under room-temperature continuous-wave (CW) operation with a stable fundamental transverse mode. The lifetime of the LDs at a constant output power of 5 mW was estimated to be approximately 3000 h under CW operation at an ambient temperature of 50 °C. These results indicate that these LDs already can be used for many real applications, such as digital versatile disks, laser printers, sensors and exciting light sources as a commercial product with a high output power and a high reliability.