Light guide for pixel crosstalk improvement in deep submicron CMOS image sensor
Light guide for pixel crosstalk improvement in deep submicron CMOS image sensor
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DOI：
10.1109/led.2003.821597
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发表时间：
2004-01-01
影响因子：
4.9
通讯作者：
Wang, CS
中科院分区：
文献类型：
--
作者：
Hsu, TH;Fang, YK;Wang, CS
光导，一种新的电介质结构组成的PE氧化物和FSG氧化物，已被开发，以减少串扰在0.18妈妈CMOS图像传感器技术。由于折射率的差异（PE-氧化物为1.46，FSG-氧化物为1.435），大部分入射光可以在PE-氧化物/FSG-氧化物的界面处全反射，因为入射角大于全反射角。利用该光导，可以增强像素感测能力并减少像素串扰。小像素间距3.0妈妈和4.0妈妈的特点和检查。在3.0微米像素，光学串扰实现了30%的光在10度的入射角减少。
Light guide, a novel dielectric structure consisting of PE-Oxide and FSG-Oxide, has been developed to reduce crosstalk in 0.18-mum CMOS image sensor technology. Due to the difference in refraction index (1.46 for PE-Oxide and 1.435 for FSG-Oxide), major part of the incident light can be totally reflected at the interface of PE-Oxide/FSG-Oxide, as the incidence angle is larger than total reflection angle. With this light guide, the pixel sensing capability can be enhanced and to reduce pixel crosstalk. Small pixels with pitch 3.0-mum and 4.0-mum have been characterized and examined. In 3.0-mum pixel, optical crosstalk achieves 30% reduction for incidence angle of light at 10degrees.