Focused ion beam-based fabrication of nanostructured photonic devices
Focused ion beam-based fabrication of nanostructured photonic devices
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DOI：
10.1109/jstqe.2005.860990
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发表时间：
2005-11
影响因子：
4.9
通讯作者：
M. Cryan;M. Hill;D. C. Sanz;P. Ivanov;P. J. Heard;L. tian;Siyuan Yu;J. Rorison
中科院分区：
文献类型：
--
作者：
M. Cryan;M. Hill;D. C. Sanz;P. Ivanov;P. J. Heard;L. tian;Siyuan Yu;J. Rorison
本文介绍了两种光子器件的聚焦离子束（FIB）加工结果：1）垂直发射的四阶光栅GaN激光器，和2）二维（2-D）光子晶体（PhC）结构。对于GaN激光器，示出了蚀刻之前和之后的L-I和I-V结果，并且示出了作为沿着光栅的距离的函数的垂直发射功率。基于有限元（FE）的电磁模型开发，以支持测量结果，并用于预测最佳的光栅深度。对于2-D光子晶体，使用直接FIB蚀刻在标准InP波导结构中产生PhC。测量和建模传输结果进行了比较，有很好的协议的频带边缘位置。孔的形状的详细研究，这导致了一个多阶段的蚀刻过程，包括反应离子蚀刻和电感耦合等离子体蚀刻的发展。这导致孔的形状大大改善。
This paper presents results for focused ion beam (FIB) processing of two photonic devices: 1) a GaN laser with a fourth-order grating for vertical emission, and 2) a two-dimensional (2-D) photonic crystal (PhC) structure. For the GaN laser, both L-I and I-V results are shown before and after etching, and vertical emitted power as a function of the distance along grating is shown. A finite element (FE)-based electromagnetic model is developed to support the measured results and is used to predict the optimum grating depth. For the 2-D photonic crystal, direct FIB etching is used to create a PhC in a standard InP waveguide structure. Measured and modeled transmission results are compared, and there is good agreement for band edge position. A detailed study of hole shape is presented, and this leads to the development of a multistage etching procedure involving both reactive ion etching and inductively coupled plasma etching. This results in a much improved hole shape.