A differential sub-nanosecond high-isolation absorptive active SiGe 24 GHz switch for UWB applications
A differential sub-nanosecond high-isolation absorptive active SiGe 24 GHz switch for UWB applications
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适用于 UWB 应用的差分亚纳秒高隔离吸收式有源 SiGe 24 GHz 开关
DOI：
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发表时间：
2004
期刊：
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通讯作者：
Gabriel M. Rebeiz
中科院分区：
文献类型：
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作者：
T. Hancock;I. Gresham;Gabriel M. Rebeiz
本文介绍了一种用于超宽带（UWB）应用的24 GHz亚纳秒、高隔离、单刀双掷（SPDT）和单刀单掷（SPST）差分吸收有源开关的设计和测量。开关和数字驱动器采用5 V电源供电，功耗为24 mA。SPDT和SPST的有效面积分别为1000 /spl mu/m /spl times/ 550 /spl mu/m和670 /spl mu/m /spl times/ 340 /spl mu/m。新颖的电路拓扑实现了SPDT，其固有地保持端口阻抗，而不管开关的状态如何。在20-26 GHz范围内插入损耗小于3 dB，在10-30 GHz范围内隔离度大于42 dB，开关时间为100 ps。
This paper presents the design and measurement of a SiGe sub-nanosecond, high isolation, single-pole double-throw (SPDT) and single-pole single-throw (SPST) differential absorptive active switch at 24 GHz for ultrawideband (UWB) applications. The switch and digital driver consume 24 mA from a 5 V supply. The active area of the SPDT and SPST is 1000 /spl mu/m /spl times/ 550 /spl mu/m and 670 /spl mu/m /spl times/ 340 /spl mu/m respectively. The novel circuit topology implements a SPDT that inherently maintains the port impedances regardless of the state of the switch. The insertion loss is less than 3 dB over the 20-26 GHz range and the isolation is >42 dB at 10-30 GHz with a switching time of 100 ps.