Quantum response of carbon nanotube quantum dots to terahertz wave irradiation
Quantum response of carbon nanotube quantum dots to terahertz wave irradiation
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DOI：
10.1088/0957-4484/18/4/044001
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发表时间：
2007-01
期刊：
影响因子：
3.5
通讯作者：
T. Fuse;Y. Kawano;T. Yamaguchi;Y. Aoyagi;K. Ishibashi
中科院分区：
文献类型：
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作者：
T. Fuse;Y. Kawano;T. Yamaguchi;Y. Aoyagi;K. Ishibashi
在频率为2.5太赫兹（THz）的太赫兹（THz）辐射下，对单壁碳纳米管（SWCNT）量子点在1.5 K下进行了单电子输运测量。这项研究中最重要的发现是只有在太赫兹辐射下才会出现新的侧峰。从与量子点相关的能量尺度的详细分析中，我们得出结论，副峰源于量子点中的电子对漏极的光子辅助隧穿（PAT）。由于与标准半导体量子点相比，swcnts量子点具有更大的能量尺度，因此目前的太赫兹- pat是第一次在量子点中观测到。
Single-electron transport measurements have been carried out at 1.5 K on single-wall carbon nanotube (SWCNT) quantum dots (QDs) under terahertz (THz) irradiation with a frequency of 2.5 THz. The most important finding in this study was new side-peaks that appeared only under the THz irradiation. From the detailed analysis with energy scales associated with the QDs, we conclude that the side-peaks originate from the photon-assisted tunnelling (PAT) of an electron in the QD to the drain electrode. The present THz-PAT is the first observation in QDs because of the larger energy scales in a SWCNT QD, compared with those of standard semiconductor QDs.