Epitaxial Relationship Analysis between ZnTe Epilayers and Sapphire Substrates
Epitaxial Relationship Analysis between ZnTe Epilayers and Sapphire Substrates
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ZnTe外延层与蓝宝石衬底的外延关系分析
DOI：
10.1007/s11664-016-4700-5
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发表时间：
2016
影响因子：
2.1
通讯作者：
and T. Asahi
中科院分区：
文献类型：
--
作者：
T. Nakasu;T. Aiba;S. Yamashita;S. Hattori;T. Kizu;W. Sun;K. Taguri;F. Kazami;Y. Hashimoto;S. Ozaki;M. Kobayashi;and T. Asahi
用分子束外延方法在蓝宝石衬底上生长了碲酸锌外延层，并与以前在c面(0001)、m面()和r面()衬底上生长的层的外延关系进行了比较。用X射线衍射法研究了薄膜的(111)晶面和衬底(0001)晶面之间的结晶学关系。结果表明，在该平面衬底上形成了两种{111}取向的微区，其中主要的微区为(111)取向。在nS平面和m平面衬底上生长的薄膜具有相同的外延关系，而在c平面衬底上生长的薄膜的外延关系呈60°旋转。这些发现将适用于控制各种器件应用的外延层表面的取向，以及各种物理性质的表征。
Zinc telluride (ZnTe) epilayers were grown onS-plane () sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously obtained for layers grown onc-plane (0001),m-plane () substrates, andr-plane (). The crystallographic relationship between the (111) plane of the ZnTe layer and (0001) plane of the substrate was studied using x-ray diffraction pole figure measurements. It was confirmed that two kinds of {111} oriented domains were formed on theS-plane substrate, and the dominant domain was (111)-oriented. Layers grown onS-plane substrate and onm-plane substrate exhibited the same epitaxial relationship, while the epitaxial relationship of the layer grown on thec-plane substrate exhibited a 60° rotation. These findings would be applicable to control the orientation of ZnTe epilayer surface for various device applications and for various physical property characterizations.