Pressure contact multi-chip packaging of SiC Schottky diodes
Pressure contact multi-chip packaging of SiC Schottky diodes
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SiC 肖特基二极管的压力接触多芯片封装
DOI：
10.23919/ispsd.2017.7988977
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
A. Castellazzi
中科院分区：
文献类型：
--
作者：
J. González;O. Alatise;P. Mawby;A. M. Aliyu;A. Castellazzi
由于消除了封装的薄弱元件，即引线键合和焊料，压力接触封装已经证明了硅器件的可靠性提高。这种封装方法尚未被广泛研究用于SiC器件，然而，它对于HVDC或铁路牵引等应用非常感兴趣，其中SiC器件的宽带隙特性可以被充分利用，并且高可靠性是至关重要的。目前的IGBT压装模块使用Si PIN二极管来实现反向导通，然而，使用SiC肖特基二极管将是有益的，因为它们具有更好的特性，包括低开关损耗和更低的零温度系数（ZTC），以实现并联二极管的导通稳定性。一个原型的SiC肖特基二极管使用压力接触的评估已经设计，建造和测试单芯片和多芯片。
Pressure contact packages have demonstrated an improved reliability for silicon devices due to the elimination of the weak elements of the packaging, namely wirebonds and solder. This packaging approach has not yet been widely studied for SiC devices, however, it is of high interest for applications like HVDC or rail traction, where the wide bandgap properties of SiC devices can be fully exploited and high reliability is critical. Current IGBT press-pack modules use Si PIN diodes for enabling reverse conduction, however, the use of SiC Schottky diodes would be beneficial given their better characteristics including low switching losses and lower zero temperature coefficient (ZTC) for electrothermal stability of diodes in parallel. A prototype for the evaluation of SiC Schottky diodes using pressure contacts has been designed, built and tested for both single die and multiple die.