High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension
High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension
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DOI：
10.1109/led.2009.2030374
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发表时间：
2009-10
影响因子：
4.9
通讯作者：
R. Ghandi;B. Buono;M. Domeij;G. Malm;C. Zetterling;M. Ostling
中科院分区：
文献类型：
--
作者：
R. Ghandi;B. Buono;M. Domeij;G. Malm;C. Zetterling;M. Ostling
通过器件仿真和击穿光学成像测量，制备了具有4.3 kV近理想击穿电压（约为理论值的80%）的无植入平台蚀刻4H-SiC PiN二极管，并对其进行了测量和分析。实现高击穿电压的关键步骤是在外延生长的p掺杂阳极层中进行可控蚀刻，以达到结端延伸（JTE）中约1.2倍1013 cm-2的最佳掺杂剂量。电致发光显示了局部雪崩击穿，这与器件模拟结果很好地吻合。对单区和双区蚀刻JTE二极管的比较表明，双区蚀刻JTE二极管的击穿电压更高，对不同加工条件的灵敏度较低。
Implantation-free mesa-etched 4H-SiC PiN diodes with a near-ideal breakdown voltage of 4.3 kV (about 80% of the theoretical value) were fabricated, measured, and analyzed by device simulation and optical imaging measurements at breakdown. The key step in achieving a high breakdown voltage is a controlled etching into the epitaxially grown p-doped anode layer to reach an optimum dopant dose of ~ 1.2 times 1013 cm-2 in the junction termination extension (JTE). Electroluminescence revealed a localized avalanche breakdown that is in good agreement with device simulation. A comparison of diodes with single- and double-zone etched JTEs shows a higher breakdown voltage and a less sensitivity to varying processing conditions for diodes with a two-zone JTE.