ScGaN and ScAlN: emerging nitride materials
ScGaN and ScAlN: emerging nitride materials
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DOI：
10.1039/c3ta14189f
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发表时间：
2014-01-01
影响因子：
11.9
通讯作者：
Zhang, S.
中科院分区：
文献类型：
--
作者：
Moram, M. A.;Zhang, S.
本文综述了钪基三族氮化物合金在节能器件应用中的最新进展和未来前景。纤锌矿结构的ScAlN和ScGaN合金是宽带隙半导体，其可以在与器件相关的低Sc含量下稳定，可以外延生长，包括晶格匹配的Sc0.18Al0.82N/GaN系统，在近紫外区分别保持高达25%ScN和50%ScN的直接带隙，并且与其它III族氮化物相比，应当提供显著更高的激子结合能和压电系数。这些特性极大地扩展了高效光电器件、高电子迁移率晶体管和能量收集器件所需的带隙和偏振工程的选择。
This review addresses the recent development and future prospects for Sc-based III-nitride alloys in energy-efficient device applications. Wurtzite-structure ScAlN and ScGaN alloys are wide band-gap semiconductors which can be stabilised at the low Sc contents relevant to devices, can be grown epitaxially, include the lattice-matched Sc0.18Al0.82N/GaN system, retain direct band gaps in the near-UV region up to 25% ScN and 50% ScN respectively, and should offer significantly higher exciton binding energies and piezoelectric coefficients compared to other III-nitrides. These properties greatly expand the options for band gap and polarisation engineering required for efficient optoelectronic devices, high-electron mobility transistors and energy-harvesting devices.