GaAs/AlGaAs Nanowire Photodetector
GaAs/AlGaAs Nanowire Photodetector
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DOI：
10.1021/nl5006004
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发表时间：
2014-05-01
期刊：
影响因子：
10.8
通讯作者：
Soci, Cesare
中科院分区：
文献类型：
--
作者：
Dai, Xing;Zhang, Sen;Soci, Cesare
我们展示了一个高效的核壳GaAs/AlGaAs纳米线光电探测器在室温下工作。这种纳米级检测器的设计是基于与金属半导体金属（MSM）径向架构相结合的I型异质结构，其中在半导体异质界面和金属/半导体肖特基接触处的内置电场促进光生电荷分离，增强光敏性。光谱光电导响应表明，纳米线支持共振光学模式在近红外区域，这导致大的光电流密度与电磁和输运计算模型的预测一致。单根纳米线光电探测器在λ = 855 nm处显示出0.57 A/W的显著峰值光响应度，与市场上的大面积平面GaAs光电探测器相当，并且具有7.2 × 10（10）cm.Hz（1/2）/W的高探测率。这是有希望的新一代的高灵敏度的单纳米线光电探测器的设计，通过控制光学模式限制，带隙，态密度，和电极工程。
We demonstrate an efficient core shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal semiconductor metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge separation, enhancing photosensitivity. The spectral photoconductive response shows that the nanowire supports resonant optical modes in the near-infrared region, which lead to large photocurrent density in agreement with the predictions of electromagnetic and transport computational models. The single nanowire photodetector shows a remarkable peak photoresponsivity of 0.57 A/W, comparable to large-area planar GaAs photodetectors on the market, and a high detectivity of 7.2 X 10(10) cm.Hz(1/2)/W at lambda = 855 nm. This is promising for the design of a new generation of highly sensitive single nanowire photodetectors by controlling the optical mode confinement, bandgap, density of states, and electrode engineering.