Effects of oxynitride buffer layer on the electrical characteristics of poly-silicon TFTs using Pr2O3 gate dielectric
Effects of oxynitride buffer layer on the electrical characteristics of poly-silicon TFTs using Pr2O3 gate dielectric
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DOI：
10.1109/ted.2008.920030
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发表时间：
2008-06-01
影响因子：
3.1
通讯作者：
Wu, Tin-Wei
中科院分区：
文献类型：
--
作者：
Pan, Tung-Ming;Wu, Tin-Wei
在本文中，我们用不同的N2O等离子体功率处理方法研制了高k的Pr2O3多晶硅薄膜晶体管(TFT)。采用200W等离子体功率的高k Pr_2O_3多晶硅TFT器件具有高载流子迁移率、高驱动电流、小的亚阈值斜率和高的I-ON/I-OFF电流比等优良的电学特性。这一结果归因于Pr_2O_3/多晶硅的光滑界面和低界面陷阱密度。采用200W N2O等离子体功率的Pr2O3多晶硅TFT也提高了电学可靠性，如热载流子和正偏压温度不稳定性。所有这些结果表明，具有氮氧化物缓冲层的高k Pr_2O_3栅电介质是制作高性能低温多晶硅TFT的良好候选者。
In this paper, we have developed high-k Pr2O3 poly-Si thin-film transistors (TFTs) using different N2O plasma power treatments. High-k Pr2O3 poly-Si TFT devices using a 200-W plasma power exhibited better electrical characteristics in terms of high effective carrier mobility, high driving current, small subthreshold slope, and high I-ON/I-OFF current ratio. This result is attributed to the smooth Pr2O3/poly-Si interface and low interface trap density. Pr2O3 poly-Si TFT with a 200-W N2O plasma power also enhanced electrical reliabilities such as hot carrier and positive bias temperature instability. All of these results suggest that a high-k Pr2O3 gate dielectric with the oxynitride buffer layer is a good candidate for high-performance low-temperature poly-Si TFTs.