High-quality GaN films grown on chemical vapor-deposited graphene films
High-quality GaN films grown on chemical vapor-deposited graphene films
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DOI：
10.1038/am.2012.45
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发表时间：
2012-09-01
影响因子：
9.7
通讯作者：
Yi, Gyu-Chul
中科院分区：
文献类型：
--
作者：
Chung, Kunook;Park, Suk In;Yi, Gyu-Chul
我们报告了用于可见光发光二极管 (LED) 的大尺寸石墨烯薄膜上的高质量 GaN 薄膜的生长。石墨烯薄膜通过化学气相沉积合成，然后转移到与GaN不具有外延关系的非晶硅（SiO2）基板上。在生长高质量 GaN 薄膜之前，在石墨烯薄膜上生长 ZnO 纳米墙作为中间层。研究了GaN薄膜的结构和光学特性，该薄膜即使在室温下也表现出受激发射、高度c轴取向的晶体结构和优选的面内取向。使用 GaN 薄膜制造了在室内照明下发出强电致发光的可见光 LED。 NPG 亚洲材料 (2012) 4, e24； doi：10.1038/am.2012.45； 2012 年 9 月 7 日在线发布
We report the growth of high-quality GaN films on large-size graphene films for visible light-emitting diodes (LEDs). The graphene films were synthesized by chemical vapor deposition and then transferred onto amorphous silica (SiO2) substrates that do not have an epitaxial relationship with GaN. Before growing the high-quality GaN thin films, ZnO nanowalls were grown on the graphene films as an intermediate layer. The structural and optical characteristics of the GaN films were investigated, and the films exhibited stimulated emission even at room temperature, a highly c-axis-oriented crystal structure, and a preferred in-plane orientation. Visible LEDs that emitted strong electroluminescence under room illumination were fabricated using the GaN thin films. NPG Asia Materials (2012) 4, e24; doi:10.1038/am.2012.45; published online 7 September 2012