Large-scale synthesis of crystalline β-SiC nanowires
Large-scale synthesis of crystalline β-SiC nanowires
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DOI：
10.1007/s00339-002-1961-z
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发表时间：
2003-03
期刊：
影响因子：
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通讯作者：
Z. Li;H. Li;X. Chen;A. Meng;K. Li;Y. P. Xu;L. Dai
中科院分区：
文献类型：
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作者：
Z. Li;H. Li;X. Chen;A. Meng;K. Li;Y. P. Xu;L. Dai
在自制的石墨反应池中，采用化学气相反应法在较低温度下合成了大量高纯度的β-SiC纳米线。采用研磨的Si和SiC粉末的混合物和C3 H6作为起始原料。结果表明，纳米线为单晶β-SiC，直径约为10-35 nm，无非晶材料包裹，纳米线轴线沿沿着分布<111>。在β-SiC纳米线的拉曼散射中发现了一些不同于以往对β-SiC材料的观察的独特性质。提出了β-SiC纳米线生长的可能机制。
Large quantities of high-purity crystalline β-SiC nanowires have been synthesized at relatively low temperature via a new simple method, the chemical-vapor-reaction approach, in a home-made graphite reaction cell. A mixture of milled Si and SiC powders and C3H6were employed as the starting materials. The results show that the nanowires with diameters of about 10–35 nm are single crystalline β-SiCwithout any wrapping of amorphous material, and the nanowire axes lie along the <111> direction. Some unique properties are found in the Raman scattering from the β-SiC nanowires, which are different from previous observations of β-SiC materials. A possible growth mechanism for the β-SiC nanowires is proposed.