Determination of partial dislocations of stacking fault in (111) single crystal diamond grown on (111) seed crystal by synchrotron X-ray topography
Determination of partial dislocations of stacking fault in (111) single crystal diamond grown on (111) seed crystal by synchrotron X-ray topography
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DOI：
10.1016/j.jcrysgro.2016.11.094
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发表时间：
2017-06
影响因子：
1.8
通讯作者：
Satoshi Masuya;K. Hanada;Tomoya Moribayashi;H. Sumiya;M. Kasu
中科院分区：
文献类型：
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作者：
Satoshi Masuya;K. Hanada;Tomoya Moribayashi;H. Sumiya;M. Kasu
