AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 μA/μm at 0.5 V
AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 μA/μm at 0.5 V
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DOI：
10.1109/led.2011.2179915
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发表时间：
2012-03-01
影响因子：
4.9
通讯作者：
Seabaugh, Alan
中科院分区：
文献类型：
--
作者：
Li, Rui;Lu, Yeqing;Seabaugh, Alan
在室温下0.5V时，隧道场效应晶体管（TFET）的导通电流达到78 μ A/μ m。TFET采用交错的AlGaSb/InAs异质结，其隧穿方向与栅极场一致。测量结果与器件结构的数值模拟相一致。优化结构的模拟表明，开关速度可比的MOSFET的源极和漏极电阻的改进，应可实现。
Record high on-current of 78 mu A/mu m in a tunnel field-effect transistor (TFET) is achieved at 0.5 V at room temperature. The TFET employs a staggered AlGaSb/InAs heterojunction with the tunneling direction oriented in-line with the gate field. The measured results are consistent with numerical simulation of the device structure. Simulations of optimized structures suggest that switching speed comparable to that of the MOSFET should be achievable with improvements in the source and drain resistances.