Statistical Enhancement of the Evaluation of Combined RDD- and LER-Induced $V_{T}$ Variability: Lessons From $\hbox{10}^{5}$ Sample Simulations
Statistical Enhancement of the Evaluation of Combined RDD- and LER-Induced $V_{T}$ Variability: Lessons From $\hbox{10}^{5}$ Sample Simulations
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RDD 和 LER 组合引起的 $V_{T}$ 变异性评估的统计增强：来自 $hbox{10}^{5}$ 样本模拟的经验教训
DOI：
10.1109/ted.2011.2147317
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发表时间：
2011
影响因子：
3.1
通讯作者：
Reid D
中科院分区：
文献类型：
--
作者：
Reid D
使用全尺寸的3-D模拟的100 000的设备，使通过“按钮”集群技术，我们详细研究了统计阈值电压的变化，在一个国家的最先进的n沟道MOSFET的随机离散掺杂剂（RDDs）和线边缘粗糙度（LER）的综合效应，并证明所产生的分布是非正态的。仔细的统计分析的结果的基础上，我们展示了如何得到的分布VT可以从所产生的分布RDD和LER变异性的个人模拟构建。在完成这项任务，我们已经部署了计算效率的统计增强技术，大大减少了计算工作量，需要准确地表征阈值电压的变化下的RDD和LER的综合影响。
Using full-scale 3-D simulations of 100 000s of devices, enabled by “push-button” cluster technology, we study in detail statistical threshold voltage variability in a state-of-the-art n-channel MOSFET introduced by the combined effect of random discrete dopants (RDDs) and line edge roughness (LER) and demonstrate that the resulting distribution is non-normal. Based on careful statistical analysis of the results, we show how the resulting distribution of VTcan be constructed from the distributions arising from the individual simulation of RDD and LER variability. In accomplishing this task, we have deployed computationally efficient statistical enhancement techniques that drastically reduce the computational effort needed to accurately characterize threshold voltage variability under the combined influence of RDD and LER.