Growth and Strain Engineering of Trigonal Te for Topological Quantum Phases in Non-Symmorphic Chiral Crystals
Growth and Strain Engineering of Trigonal Te for Topological Quantum Phases in Non-Symmorphic Chiral Crystals
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DOI：
10.3390/cryst9100486
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发表时间：
2019-10-01
期刊：
影响因子：
2.7
通讯作者：
Hu, Jin
中科院分区：
文献类型：
--
作者：
Basnet, Rabindra;Doha, M. Hasan;Hu, Jin
据预测，应变三角 Te 拥有由非同态手性对称性支持的 Weyl 节点。利用低压物理气相沉积，我们系统地探索了三角碲纳米线的生长，以及由线的弯曲引起的自然应变。拉曼光谱和高迁移率电子传输证明了导线的高度结晶性质。直纳米线和弯曲纳米线的拉曼光谱的比较表明，弯曲纳米线的呼吸模式明显更宽并且频率发生变化。因此，生长过程中曲率引起的应变可能为研究三角碲的拓扑相提供一个简单的途径。
Strained trigonal Te has been predicted to host Weyl nodes supported by a non-symmorphic chiral symmetry. Using low-pressure physical vapor deposition, we systematically explored the growth of trigonal Te nanowires with naturally occurring strain caused by curvature of the wires. Raman spectra and high mobility electronic transport attest to the highly crystalline nature of the wires. Comparison of Raman spectra for both straight and curved nanowires indicates a breathing mode that is significantly broader and shifted in frequency for the curved wires. Strain induced by curvature during growth therefore may provide a simple pathway to investigate topological phases in trigonal Te.