Implementation of double patterning process toward 22-nm node
Implementation of double patterning process toward 22-nm node
复制标题
向 22 纳米节点实施双图案化工艺
DOI：
--
复制
发表时间：
2009
期刊：
影响因子：
--
通讯作者：
K. Oyama
中科院分区：
文献类型：
--
作者：
H. Yaegashi;Eiichi Nisimura;K. Hasebe;T. Kawasaki;M. Kushibiki;A. Hara;S. Yamauchi;Sakurako Natori;Nakajima Shigeru;H. Murakami;K. Yabe;S. Shimura;F. Iwao;K. Oyama
在光刻领域，在193 mm水基浸没式光刻的主流技术下，正在应用各种分辨率增强技术（RET）。然而，光致抗蚀剂的分辨率性能在40 nm处受到限制。双重图案化（DP）被认为是克服这种限制分辨率的有效技术。已经开始研究许多双重图案化技术，诸如光刻-蚀刻-光刻-蚀刻（LELE）、光刻-光刻-蚀刻（LLE）和自对准间隔物DP，但是由于图案分裂类型的双重图案化需要曝光设备中的高重叠精度，因此自对准类型的双重图案化已经成为主要方法。本文介绍了22 nm节点的各种双重图形化技术的研究成果，并涉及到新开发的双重图形化的基本技术。
In the field of photolithography, a variety of resolution enhancement techniques (RETs) are being applied under the mainstream technology of 193-mm water-based immersion lithography. The resolution performance of photoresist, however, is limited at 40 nm. Double patterning (DP) is considered to be an effective technology for overcoming this limiting resolution. Many double-patterning techniques have come to be researched such as litho-etch-litho-etch (LELE), litho-litho-etch (LLE), and self-aligned spacer DP, but as the pattern-splitting type of double patterning requires high overlay accuracy in exposure equipment, the self-aligned type of double patterning has become the main approach. This paper introduces the research results of various double-patterning techniques toward 22nm nodes and touches upon newly developed elemental technologies for double patterning.