Possibility of an excitonic ground state in quantum wells.
Possibility of an excitonic ground state in quantum wells.
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DOI：
10.1103/physrevb.32.2607
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发表时间：
1985-08
期刊：
影响因子：
--
通讯作者：
S. Datta;M. Melloch;R. Gunshor
中科院分区：
文献类型：
--
作者：
S. Datta;M. Melloch;R. Gunshor
过去已经考虑过在半导体中形成具有小于激子结合能的间接带隙的激子绝缘体的可能性。量子阱结构的出现使得考虑真实空间中的间接能隙成为可能，这些能隙可以通过半导体-半金属转变方便地调节。我们讨论了各种量子阱配置，其中激子自发凝聚成集体基态是可能的。
The possibility of the formation of an excitonic insulator in semiconductors with an indirect gap smaller than the exciton binding energy has been considered in the past. The advent of quantum-well structures makes it feasible to consider indirect gaps in real space that can be conveniently tuned through the semiconductor-semimetal transition. We discuss various quantum-well configurations where a spontaneous condensation of excitons into a collective ground state may be possible.