Heavily Si‐doped GaAs grown by metalorganic chemical vapor deposition
Heavily Si‐doped GaAs grown by metalorganic chemical vapor deposition
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金属有机化学气相沉积法生长重硅掺杂砷化镓
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
T. Kamejima
中科院分区：
文献类型：
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作者：
N. Furuhata;K. Kakimoto;Yoshida Masaji;T. Kamejima
通过使用乙硅烷（Si 2 H6）作为硅掺杂剂源气体的金属有机化学气相沉积方法来生长重Si掺杂的GaAs层。通过货车der Pauw、二次离子质谱和低温傅里叶变换红外光谱（FTIR）方法对生长的层进行表征。载流子浓度在550 ~ 700 °C的温度范围内没有生长温度依赖性。然而，它在550 °C以下和700 °C以上具有温度依赖性。Si掺杂GaAs的载流子浓度通常在6×1018 cm−3水平饱和。此外，Si掺杂使得载流子浓度降低。通过使用低温FTIR方法，在重掺杂Si的GaAs中观察到SiGa、SiAs、SiGa-SiAs对的吸收带和较低的能带（374和369 cm−1）。SiGa的峰强度小于SiAs的峰强度，并且374和369 cm-1处的峰高度相对大于其它峰的峰高度。这些事实表明，在重Si掺杂的GaAs中，一部分...
Heavily Si‐doped GaAs layers were grown by a metalorganic chemical vapor deposition method using disilane (Si2H6) as a silicon dopant source gas. The grown layers were characterized by the van der Pauw, secondary ion mass spectroscopy, and low‐temperature Fourier transformation infrared spectroscopy (FTIR) method. The carrier concentration has no growth temperature dependence from 550 to 700 °C temperature range. However, it has temperature dependence below 550 °C and above 700 °C. The carrier concentration of Si‐doped GaAs is usually saturated at 6×1018 cm−3 level. Further, Si doping makes the carrier concentration decrease. By using the low‐temperature FTIR method, absorption bands for SiGa, SiAs, SiGa‐SiAs pair, and lower energy bands (374 and 369 cm−1) were observed in heavily Si‐doped GaAs. The peak intensity for SiGa is smaller than that for SiAs, and the peak heights at 374 and 369 cm−1 are relatively larger than that for the other peaks. These facts suggest that, in heavily Si‐doped GaAs, a part o...