The Anti-Localization Effect in Bi Thin Films
The Anti-Localization Effect in Bi Thin Films
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DOI：
10.1143/jpsj.52.368
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发表时间：
1983-02
影响因子：
1.7
通讯作者：
F. Komori;Shun-ichi Kobayachi;W. Sasaki
中科院分区：
文献类型：
--
作者：
F. Komori;Shun-ichi Kobayachi;W. Sasaki
测量了Bi薄膜的电导率随温度和磁场的变化，并与局域化理论和电子间库仑相互作用理论进行了比较。在强自旋轨道相互作用的情况下的反局域化效应的电导率随温度降低的对数增加，被发现与其他ln T项由于相互作用的效果。从磁场依赖性的分析，非弹性散射时间的变化被确定为T-1低于1.5 K和T-2高于4 K是一致的电导率的温度依赖性。
Temperature and magnetic field dependence of conductivity in Bi thin films is measured and compared with theories of the localization and the Coulomb interaction between electrons. The anti-localization effect in the case of strong spin-orbit interaction–logarithmic increase of conductivity with decreasing temperature–is found together with the other ln T term due to the interaction effect. From the analysis of the magnetic field dependence the inelastic scattering time is determined to vary as T -1 below 1.5 K and as T -2 above 4 K being consistent with the temperature dependence of conductivity.