Raman study of silicon telluride nanoplates and their degradation
Raman study of silicon telluride nanoplates and their degradation
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DOI：
10.1088/1361-6528/ac5c13
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发表时间：
2022-03
期刊：
影响因子：
3.5
通讯作者：
E. Hathaway;Jiyang Chen;R. Gonzalez-Rodriguez;Yuankun Lin;J. Cui
中科院分区：
文献类型：
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作者：
E. Hathaway;Jiyang Chen;R. Gonzalez-Rodriguez;Yuankun Lin;J. Cui
碲化硅（Si 2 Te 3）已成为制造原子级薄器件的理想二维材料的众多竞争者之一。尽管在碲化硅的电学和光学性质方面取得了进展，但仍需要做大量工作才能更好地了解这种材料。我们在这里报告的拉曼研究Si 2 Te 3退化退火和原位加热与激光。这两个过程都导致原始的Si 2 Te 3在没有保护涂层的情况下在空气中降解为碲和氧化硅。从降解的样品中观察到一个先前未报道的拉曼峰，位于140 cm−1处，发现与纯碲有关。该峰先前在文献中未与原始Si 2 Te 3的144 cm-1处的峰分辨，并且被错误地指定为纯Si 2 Te 3的特征拉曼峰，这导致对实验数据的错误解释。我们的研究使我们对Si_2 Te_3的拉曼峰有了一个基本的了解，并有助于解决文献中不一致的问题。这项研究不仅对基本认识很重要，而且对材料表征和应用也至关重要。
Silicon telluride (Si2Te3) has emerged as one of the many contenders for 2D materials ideal for the fabrication of atomically thin devices. Despite the progress which has been made in the electric and optical properties of silicon telluride, much work is still needed to better understand this material. We report here on the Raman study of Si2Te3 degradation under both annealing and in situ heating with a laser. Both processes caused pristine Si2Te3 to degrade into tellurium and silicon oxide in air in the absence of a protective coating. A previously unreported Raman peak at ∼140 cm−1 was observed from the degraded samples and is found to be associated with pure tellurium. This peak was previously unresolved with the peak at 144 cm−1 for pristine Si2Te3 in the literature and has been erroneously assigned as a signature Raman peak of pure Si2Te3, which has caused incorrect interpretations of experimental data. Our study has led to a fundamental understanding of the Raman peaks in Si2Te3, and helps resolve the inconsistent issues in the literature. This study is not only important for fundamental understanding but also vital for material characterization and applications.