Feasibility of TFEL application of Ce-doped CaGa2S4 and SrGa2S4 films prepared by flash evaporation method

Feasibility of TFEL application of Ce-doped CaGa2S4 and SrGa2S4 films prepared by flash evaporation method
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闪蒸法制备Ce掺杂CaGa2S4和SrGa2S4薄膜的TFEL应用可行性

DOI:
10.1016/s0022-3697(03)00198-7
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发表时间:
2003
影响因子:
4
通讯作者:
S. Iida
S. Iida
中科院分区:
材料科学3区
文献类型:
--
作者:
A. Bayramov;H. Najafov;A. Kato;M. Yamazaki;K. Fujiki;M. Nazri;S. Iida

文献摘要

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采用闪蒸法首次制备了掺杂ce的CaGa2S4和SrGa2S4薄膜。采用光致发光光谱、吸收光谱、x射线衍射和电子探针显微分析等方法对薄膜在H2S (10%)+ Ar气流中退火前后进行了表征。退火前的x射线衍射曲线和吸收光谱显示出非晶态行为,而退火导致了明显的结晶并改善了薄膜的化学计量。基于用CaGa2S4: Eu粉末制备的色散型EL电池的性能数据以及与CaGa2S4: Eu和CaGa2S4: Ce粉末的光致发光性能比较,闪蒸制备的退火薄膜可以考虑成为TFEL平板器件的候选材料之一。
Ce-doped CaGa2S4 and SrGa2S4 thin films were prepared for the first time by the flash evaporation method. The films were characterized before and after annealing in H2S (10%)+ Ar gas stream by measuring photoluminescence and absorption spectra, X-ray diffraction and electron probe micro analyses. X-ray diffraction curves and absorption spectra before annealing show amorphous behaviour, whereas the annealing leads to a significant crystallization and improves the stoichiometry of the films. Based on the performance data obtained from dispersive type EL cells using CaGa2S4: Eu powder together with photoluminescence property comparison between CaGa2S4: Eu and CaGa2S4: Ce powders, the annealed films prepared by flash evaporation can be considered to become one of the candidates for TFEL flat panel devices.