Feasibility of TFEL application of Ce-doped CaGa2S4 and SrGa2S4 films prepared by flash evaporation method
Feasibility of TFEL application of Ce-doped CaGa2S4 and SrGa2S4 films prepared by flash evaporation method
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闪蒸法制备Ce掺杂CaGa2S4和SrGa2S4薄膜的TFEL应用可行性
DOI:
10.1016/s0022-3697(03)00198-7
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发表时间:
2003
影响因子:
4
通讯作者:
S. Iida
中科院分区:
文献类型:
--
作者:
A. Bayramov;H. Najafov;A. Kato;M. Yamazaki;K. Fujiki;M. Nazri;S. Iida
Ce-doped CaGa2S4 and SrGa2S4 thin films were prepared for the first time by the flash evaporation method. The films were characterized before and after annealing in H2S (10%)+ Ar gas stream by measuring photoluminescence and absorption spectra, X-ray diffraction and electron probe micro analyses. X-ray diffraction curves and absorption spectra before annealing show amorphous behaviour, whereas the annealing leads to a significant crystallization and improves the stoichiometry of the films. Based on the performance data obtained from dispersive type EL cells using CaGa2S4: Eu powder together with photoluminescence property comparison between CaGa2S4: Eu and CaGa2S4: Ce powders, the annealed films prepared by flash evaporation can be considered to become one of the candidates for TFEL flat panel devices.