Metal–insulator–semiconductor structure on GaAs using a pseudomorphic Si/GaP interlayer
Metal–insulator–semiconductor structure on GaAs using a pseudomorphic Si/GaP interlayer
复制标题
使用假晶 Si/GaP 中间层的 GaAs 上的金属-绝缘体-半导体结构
DOI：
10.1116/1.589274
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发表时间：
1997
影响因子：
1.4
通讯作者：
H. Morkoç
中科院分区：
文献类型：
--
作者：
Dae;S. Mohammad;Zhi Chen;H. Morkoç
我们报道了一种新的砷化镓金属-绝缘体-半导体（MIS）结构，其界面态密度为9.2×1010 eV−1 cm−2，在砷化镓上有Si (10 a)/GaP （12 a）层。该结构采用分子束外延和化学气相沉积相结合的方法生长。在±1.4 mV /cm左右的场摆幅下，MIS电容器的磁滞和频散均低于100 mV，有的甚至低至70 mV。在500-550°C的N2中使用快速热退火的非原位固相退火足以在低温（~ 300°C）下再结晶沉积的Si中间层。在77 K下的100 kHz频率响应表明，界面钉钉水平接近砷化镓的导带边缘。本文报道了伪晶Si/GaP中间层首次应用于理想的GaAs MIS二极管，并在高温退火下表现出良好的界面稳定性。
We report on a novel GaAs metal–insulator–semiconductor (MIS) structure exhibiting the interface state densities in the 9.2×1010 eV−1 cm−2 with a Si (10 A)/GaP (12 A) layer on GaAs. The structure was grown by a combination of molecular beam epitaxy and chemical vapor deposition. The hysteresis and frequency dispersion of the MIS capacitor were lower than 100 mV, some of them as low as 70 mV under a field swing of about ±1.4 MV/cm. Ex situ solid phase annealing around 500–550 °C in N2 using rapid thermal annealing was high enough to recrystallize the as-deposited Si interlayer at low temperature (∼300 °C). The 100 kHz frequency response at 77 K suggests that the interface pinning levels are close to the conduction band edge of GaAs. This article reports the first application of a pseudomorphic Si/GaP interlayer to ideal GaAs MIS diodes and exhibits a favorable interface stability with high temperature annealing.