Enhanced thermoelectric performance of Al-doped ZnO thin films on amorphous substrate
Enhanced thermoelectric performance of Al-doped ZnO thin films on amorphous substrate
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DOI：
10.7567/jjap.53.060306
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发表时间：
2014-06-01
影响因子：
1.5
通讯作者：
Ichinose, Ataru
中科院分区：
文献类型：
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作者：
Saini, Shrikant;Mele, Paolo;Ichinose, Ataru
采用脉冲激光沉积法（PLD）在非晶石英衬底上制备了掺Al 2%的ZnO（AZO）薄膜，在300 C下制备的AZO薄膜具有良好的结晶性和晶粒间的连接性，这与其高的热电性能密切相关：600 K下电导率σ = 923 S/cm，塞贝克系数S = -111 μ V/K。其功率因数（S-2中心点σ）为1.2 × 10（-3）Wm（-1）K（-2），比在相同实验条件下沉积在晶体SrTiO 3上的薄膜好两倍。利用我们在300 K下测量的热导率（kappa）（4.89Wm（-1）K（-1）），计算出600 K下的品质因数ZT =（S-2中心点σ中心点T/kappa）为0.045，比我们先前报道的体ZnO的ZT大5倍。(C)2014日本应用物理学会
2% Al-doped ZnO (AZO) thin films fabricated at 300 C by pulsed laser deposition (PLD) on amorphous fused silica demonstrated the high quality crystallinity and grain connection, which correlates to the high thermoelectric performance: electrical conductivity sigma = 923S/cm and Seebeck coefficient S = -111 mu V/K at 600 K. Its power factor (S-2 center dot sigma) is 1.2 x 10(-3)Wm(-1)K(-2), twofold better than films deposited on crystalline SrTiO3 under the same experimental conditions. Using our measured thermal conductivity (kappa) at 300K (4.89Wm(-1)K(-1)), the figure of merit, ZT = (S-2 center dot sigma center dot T/kappa), is calculated as 0.045 at 600 K, 5 times larger than ZT of our previously reported bulk ZnO. (C) 2014 The Japan Society of Applied Physics