Nitrided $\hbox{La}_{2}\hbox{O}_{3}$ as Charge-Trapping Layer for Nonvolatile Memory Applications
Nitrided $\hbox{La}_{2}\hbox{O}_{3}$ as Charge-Trapping Layer for Nonvolatile Memory Applications
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DOI：
10.1109/tdmr.2011.2182197
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发表时间：
2012-06
影响因子：
2
通讯作者：
X. Huang;J. Sin;P. Lai
中科院分区：
文献类型：
--
作者：
X. Huang;J. Sin;P. Lai
基于Al/Al_2O_3/La_2O_3/SiO_2/Si(Monos)电容器，研究了掺氮前后La_2O_3的电荷捕获特性。用X射线衍射仪和X射线光电子能谱分析了高k薄膜的物理性质。与以La_2O_3为电荷捕获层的单层电容器相比，添加氮化La_2O_3的电容器具有更大的存储窗口(在±10-V扫描电压下为4.9V)、更高的编程速度(在1-ms+14V时为4.9V)和更小的电荷损耗(10年后为27%)，这是因为氮化的La_2O_3薄膜表现出较少的结晶结构和较高的陷阱密度，并且通过氮钝化抑制了漏电流。
Charge-trapping characteristics of La2O3 with and without nitrogen incorporation were investigated based on Al/Al2O3/La2O3/SiO2/Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with La2O3 as charge-trapping layer, the one with nitrided La2O3 showed a larger memory window (4.9 V at ±10-V sweeping voltage), higher program speed (4.9 V at 1-ms +14 V), and smaller charge loss (27% after 10 years), due to the nitrided La2O3 film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation.