Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate
Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate
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硅衬底上3C-SiC Pendeo外延生长的控制
DOI：
10.4028/www.scientific.net/msf.433-436.209
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
S. Nishino
中科院分区：
文献类型：
--
作者：
Y. Okui;C. Jacob;Satoru Ohshima;S. Nishino
为了减少高密度的界面缺陷，提出了一种垂向外延生长方法。采用CVD方法，利用HMDS（乙基二硅烷）实现了在之前沉积在图图化硅衬底上的3C-SiC种子上生长的c - sic的双向外延。在独立横向外延过度生长的3C-SiC下观察到气隙。在1350℃下，再生形成垂晶外延。影响垂晶外延的重要参数是H2载流子流速对再生的影响和生长温度对种子3C-SiC形成的影响。在1350℃的生长温度下，种子区和LE O区均呈现光滑的表面形貌。扫描电镜显示了横向生长的聚并，有利于3C-SiC的垂向外延生长。
A pendeo epitaxial growth approach has been developed in order to re duce the high density of interfacial defects. Pendeo epitaxy of 3C-SiC grown on t he seed 3C-SiC previously deposited on patterned Si substrates was achieved via CVD using hexam ethyldisilane (HMDS). The air-gap was observed under the free-standing lateral epitaxial overgrowth of 3C-SiC. Regrowth to form pendeo epitaxy was demonstrated at 1350 ̊C~. Remarkable parame ters regarding pendeo epitaxy are the H2 carrier flow rate on the regrowth and the growth temperature on the formation of the seed 3C-SiC. The smooth surface morphology is observed on both the seed regions and the LE O regions at the growth temperature of 1350 ̊C. Scanning electron micros copie revealed coalescence of the laterally growing for pendeo epitaxial growth of 3C-SiC.