Light extraction enhancement of InGaN MQW by reducing total internal reflection through surface plasmon effect
Light extraction enhancement of InGaN MQW by reducing total internal reflection through surface plasmon effect
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DOI：
10.1117/12.678423
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发表时间：
2006-08
期刊：
影响因子：
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通讯作者：
Chien-Chieh Lee;D. L. Wang;C. C. Chen-C.;Jenq-Yang Chang;B. Pong;G. Chi;Liang-Wen Wu
中科院分区：
文献类型：
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作者：
Chien-Chieh Lee;D. L. Wang;C. C. Chen-C.;Jenq-Yang Chang;B. Pong;G. Chi;Liang-Wen Wu
InGaN/GaN多量子阱（MQW）和半透明金属层的耦合显示出在光谱范围内通过表面等离子体激元效应导致自发辐射率的显著增强。五对18.5nm的InGaN/GaN多量子阱位于175 nm处，形成不同厚度（t=5~ 50 nm）的银层。利用电子束光刻技术，在金属薄膜的顶层形成周期性的图形（p=0.25~0.8μm），这种周期性的图形是一种光栅结构，可以在金属薄膜和半导体之间的干涉中激发表面等离子体。我们已经通过实验测量了所制造的结构的自发发射的光致发光强度和峰值位置，并与未处理的样品进行了比较，同时仍然确保大部分发射发生在表面等离子体（SP）模式中。并讨论了这些结果对减少发光二极管全内反射（TIR）提取光的意义。
Coupling of a InGaN/GaN multi-quantum well (MQW) and semitransparent metal layer is shown to result in dramatic enhancement of spontaneous emission rate by the surface plasmon effect in the optical spectral range. A five-pairs 18.5nm InGaN/GaN MQW is positioned 175nm, form various thickness (t=5~50nm) silver layer. And periodic patterns (p=0.25~0.8μm) are defined in the top semitransparent metal layer by e-beam lithography, which are grating structures can be incorporated into the metal film to excite surface plasmon between the interference of the metal film and semiconductor. We have experimentally measured photoluminescence intensity and peak position of spontaneous emission of the fabricated structures and compared with the unprocessed samples, whilst still ensuring that most of the emission takes place into the surface plasmon (SP) mode. And the implication of these results for extracting light by reducing total internal reflection (TIR) from light emission diode is discussed.