Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates
Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates
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GaAs 衬底上气源分子束外延生长 TlInGaAs 层
DOI：
10.1143/jjap.41.1016
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
H. Asahi
中科院分区：
文献类型：
--
作者：
H. Lee;Akiko Mizobata;O. Maeda;Kenta Konishi;K. Asami;H. Asahi
提出了一种新型的合金半导体TlInGaAsN/AlGaAs异质结结构，用于制作阈值电流和激射波长温度稳定的1.3-1.55 μm激光二极管。用气体源分子束外延技术在GaAs衬底上生长了TlInGaAs/GaAs和InGaAs/GaAs双异质（DH）、多异质（MD）和单量子阱（SQW）结构。结合到TlInGaAs的Tl被证实高达9%的反射高能电子衍射强度振荡。在TlInGaAs/GaAs DH、MH和SQW样品中也观察到了光致发光峰能量的红移，这与Tl的掺入相一致。
New alloy semiconductor TlInGaAsN/AlGaAs heterostructures for fabricating 1.3–1.55 µm wavelength laser diodes with temperature-stable threshold current and temperature-stable lasing wavelength are proposed. TlInGaAs/GaAs and InGaAs/GaAs double-hetero (DH)-, multi-hetero (MD)- and single-quantum-well (SQW) structures were grown on GaAs substrates by gas source molecular beam epitaxy. Incorporation of Tl into TlInGaAs was confirmed up to 9% with reflection high-energy electron diffraction intensity oscillation. Red shift of the photoluminescence peak energy was also observed for TlInGaAs/GaAs DH, MH and SQW samples, which agrees with the incorporation of Tl.