STRONG TUNNELING AND COULOMB BLOCKADE IN A SINGLE-ELECTRON TRANSISTOR

STRONG TUNNELING AND COULOMB BLOCKADE IN A SINGLE-ELECTRON TRANSISTOR
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单电子晶体管中的强隧道效应和库伦封锁

DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
A. Zaikin
A. Zaikin
中科院分区：
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文献类型：
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作者：
D. Chouvaev;L. Kuzmin;D. Golubev;A. Zaikin

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我们已经开发了一个详细的实验研究的单电子晶体管在强隧穿制度。虽然减弱了强烈的电荷波动，库仑效应被发现坚持在所有的样品，包括一个有效电导8倍以上的量子值（6.45 k$Ω $）$^{-1}$。在强隧穿极限下，我们的实验数据与理论结果符合得很好，证明了电导大于量子值3-4倍的晶体管的可靠工作。
We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 k$Omega$)$^{-1}$. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3-4 times larger than the quantum value is demonstrated.