REFLECTIVITY AND BAND-STRUCTURE OF 1T-VSE2
REFLECTIVITY AND BAND-STRUCTURE OF 1T-VSE2
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DOI：
10.1088/0022-3719/17/12/017
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发表时间：
1984-01-01
期刊：
影响因子：
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通讯作者：
LIANG, WY
中科院分区：
文献类型：
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作者：
BAYLISS, SC;LIANG, WY
在室温和液氮温度下测量了1 T-VSe 2的垂直于c和E//c的正入射反射谱，并对能量范围为0.6-14 eV的垂直于c的反射谱进行了Kramers-Kronig分析。在110 K下形成的电荷密度波可以抑制自由载流子等离子体共振的能量，并将自由载流子的数量减少到每分子单位小于0.63。与Zunger和Freeman（1979）的能带结构总体上一致;然而，结果表明需要将d型带的计算位置降低0.2-0.3 eV，将s/p型导带的计算位置降低约1.5 eV。光谱还表明，1 T-VSe 2可能是一个真正的二维导体。
Normal-incidence reflectivity spectra of 1T-VSe 2 have been measured at room and liquid nitrogen temperatures with E perpendicular to c and E//c, and Kramers-Kronig analysis has been carried out for the E perpendicular to c spectra over the energy range 0.6-14 eV. The formation of charge-density waves at 110K is seen to suppress the energy of the free-carrier plasma resonance and to reduce the number of free carriers to less than 0.63 per formula unit. There is good overall agreement with the band structure of Zunger and Freeman (1979); however, the results suggest the need to lower the calculated positions of the d-like bands by 0.2-0.3 eV, and the s/p-like conduction band by about 1.5 eV. The spectra also suggest that 1T-VSe 2 is probably a truly two-dimensional conductor.