Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy
Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy
复制标题
DOI：
10.1063/1.3592343
复制
发表时间：
2011-06
影响因子：
3.2
通讯作者：
D. Dumcenco;S. Levcenco;Ying-Sheng Huang;C. Reynolds;J. Reynolds;K. Tiong;T. Paskova;K. Evans
中科院分区：
文献类型：
--
作者：
D. Dumcenco;S. Levcenco;Ying-Sheng Huang;C. Reynolds;J. Reynolds;K. Tiong;T. Paskova;K. Evans
通过分别在 10 K 和 300 K 下的光致发光 (PL) 和非接触电反射 (CER) 以及 300 K 下的光反射，对通过氢化物气相外延生长的独立式纤锌矿半绝缘 Fe 掺杂 GaN (SI-GaN:Fe) 进行了详细的光学表征。Ga 面的低温 PL 光谱由红外的 Fe3+ 杂质特征系列组成峰值在 1.299 eV 处具有尖锐的零声子线 (ZPL)、黄色和蓝色宽发射带以及紫外区域的近带边缘 (NBE) 发射。 ZPL 的 135 μeV 窄线宽以及 ZPL 和 E2（高）声子复制品之间测量的~70 meV 的能量差（对晶格应变敏感）显示出良好的晶体质量和铁的无应变掺入。获得的 CER 光谱中 A、B 和 C 激子特征的跃迁能以及 A 和 B 激子的 n = 2 激发态 (2s) 使得能够估计激子结合能。除了自由激子...
A detailed optical characterization of a freestanding wurtzite semi-insulating Fe-doped GaN (SI-GaN:Fe) grown by hydride-vapor-phase-epitaxy was carried out by photoluminescence (PL) and contactless electroreflectance (CER) at 10 and 300 K, respectively, and photoreflectance at 300 K. Low-temperature PL spectrum of the Ga-face consisted of the Fe3+ impurity characteristic series of IR peaks with a sharp zero-phonon line (ZPL) at 1.299 eV, yellow and blue broad emission bands, and near-band-edge (NBE) emission in the ultraviolet region. The narrow linewidth of 135 μeV of the ZPL and the measured energy difference of ∼70 meV between the ZPL and E2 (high) phonon replica, which is sensitive to the lattice strain, shows good crystal quality and a strain-free incorporation of iron. The obtained transition energies of A, B, and C excitonic features in the CER spectra and the n = 2 excited states (2s) of the A and B excitons enable the estimation of the exciton binding energies. In addition to the free excitonic ...