Stability of (1(1)over-bar-00) m-plane GaN films grown by metalorganic chemical vapor deposition
Stability of (1(1)over-bar-00) m-plane GaN films grown by metalorganic chemical vapor deposition
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DOI：
10.1143/jjap.45.8644
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发表时间：
2006-11-01
期刊：
影响因子：
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通讯作者：
DenBaars, Steven P.
中科院分区：
文献类型：
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作者：
Imer, Bilge;Wu, Feng;DenBaars, Steven P.
我们用金属有机化学气相沉积(MOCVD)方法在m平面6H-SiC衬底上用AlN成核层(NL)生长了(1(1)Over bar 00)平面非极性GaN薄膜。研究了不同生长条件下m平面GaN薄膜的稳定性，包括反应压力、温度、III和V族流量。M平面GaN薄膜的表面形貌和晶体质量对这些生长参数的变化不那么敏感，而非极性(11(2))a平面异质外延平面GaN薄膜的表面形貌和晶体质量对这些生长变量的变化不敏感。M面上m-GaN的穿线位错密度比a面上的a-GaN低一个数量级。
We show the stability of planar nonpolar (1 (1) over bar 00) m-plane GaN thin films grown on m-plane 6H-SiC substrates using an AlN nucleation layer (NL) by metalorganic chemical vapor deposition (MOCVD). The stability of the m-plane GaN films was studied for a wide range of growth variables including reactor pressure, temperature, and group III and V flow rates. The surface morphology and crystal quality of the m-plane GaN films were less sensitive to changes in these growth variables than those of nonpolar (11 (2) over bar0) a-plane heteroepitaxial planar GaN films. The threading dislocation density of m-GaN on m-plane 6H-SiC was one order of magnitude lower than that of a-GaN on a-plane 6H-SiC.