(Invited) Towards 0.7 Terahertz Silicon Germanium Heterojunction Bipolar Technology – The DOTSEVEN Project
(Invited) Towards 0.7 Terahertz Silicon Germanium Heterojunction Bipolar Technology – The DOTSEVEN Project
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（特邀）迈向0.7太赫兹硅锗异质结双极技术——DOTSEVEN项目
DOI：
10.1149/06406.0021ecst
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发表时间：
2014
影响因子：
4.3
通讯作者：
R. Lachner
中科院分区：
文献类型：
--
作者：
R. Lachner
DOTSEVEN是一个非常雄心勃勃的欧洲研发项目，目标是开发截止频率（fmax）约为700 GHz的硅锗（SiGe）异质结双极晶体管（HBT）技术。该项目于2012年10月开始，将于2016年3月结束。它是前一个项目DOTFIVE的延续，该项目首次成功地将SiGe HBT的fmax推向500 GHz区域。除了大幅提高SiGe HBT的速度性能外，还将解决其集成到130 nm BiCMOS工艺中的挑战性任务。该技术的能力和优势将通过0.1至1 THz范围内的基准电路和先进系统应用（如THz成像和传感，无线Gb/s通信和毫米波雷达）来展示。工艺开发和电路设计将得到改进的TCAD和基于物理的器件仿真以及精确的紧凑型器件建模的帮助。
DOTSEVEN is a very ambitious European R&D project targeting the development of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) technologies with cut-off frequencies (fmax) of around 700 GHz. The project started in October 2012 and will end in March 2016. It is the continuation of the predecessor project DOTFIVE which succeeded to push fmax of SiGe HBTs into the 500 GHz region for the first time. Besides enhancing the speed performance of the SiGe HBT drastically, the challenging task of its integration into a 130 nm BiCMOS process will be addressed too. The capabilities and benefits of the technology will be demonstrated by benchmark circuits and advanced system applications in the 0.1 to 1 THz range like THz imaging and sensing, wireless Gb/s communications and millimeter-wave radar. Process development and circuit design will be assisted by improved TCAD and physics-based device simulation and accurate compact device modeling.