The conduction band structures of GaAs and InP
The conduction band structures of GaAs and InP
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GaAs和InP的导带结构
DOI：
10.1088/0022-3719/6/9/016
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发表时间：
1973
期刊：
影响因子：
--
通讯作者：
G. Pitt
中科院分区：
文献类型：
--
作者：
G. Pitt
综述了现有的GaAs和InP导电带结构的实验数据。讨论了高电场转移电子效应所涉及的子带能隙和最小态密度，并给出了优选值。在低温下，GaAs和InP中的X1C- Gamma 1C间隙明显增大。从可能的压力系数、有效质量和能隙等方面分析了InP的高压霍尔效应数据。X1C和L1C最小值的有效质量高于与其他III-V化合物直接比较的预期，但与k.p理论的基本预测基本一致。
The available experimental data on the conduction band structure of GaAs and InP is reviewed. The sub-band energy gaps and density of states in the minima involved in the high electric field transferred electron effect are discussed and preferred values given. The X1C- Gamma 1C gaps in both GaAs and InP apparently increase at low temperatures. High pressure Hall effect data on InP are analysed in terms of possible pressure coefficients, effective masses, and energy gaps. The effective masses in the X1C and L1C minima are higher than expected from direct comparisons with other III-V compounds, but are in general agreement with the basic predictions of k.p theory.