The Importance of Recombination via Excited States in InAs/GaAs $\hbox{1.3}\;\mu$m Quantum-Dot Lasers
The Importance of Recombination via Excited States in InAs/GaAs $\hbox{1.3}\;\mu$m Quantum-Dot Lasers
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InAs/GaAs $hbox{1.3};mu$m 量子点激光器中通过激发态复合的重要性
DOI：
10.1109/jstqe.2009.2015679
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发表时间：
2009
影响因子：
4.9
通讯作者：
A. Adams
中科院分区：
文献类型：
--
作者：
M. Crowley;I. Marko;N. Massé;A. Andreev;S. Tomić;S. Sweeney;E. O’Reilly;A. Adams
1.3 μm InAs/GaAs 量子点激光器的阈值电流密度的辐射和非辐射分量的温度依赖性已经通过实验和理论进行了分析。结果表明，由于激发态跃迁的光学矩阵元明显小于基态跃迁的光学矩阵元，因此测量到的辐射电流密度出现微弱的温度变化。相反，非辐射俄歇复合对于涉及激发态的跃迁具有与涉及基态载流子的跃迁相似的概率。高温下阈值电流密度的急剧增加遵循立方阈值载流子密度的温度变化，证实俄歇复合是这些器件在室温下的主要复合机制。
The temperature dependence of the radiative and nonradiative components of the threshold current density of 1.3 mum InAs/GaAs quantum-dot lasers have been analyzed both experimentally and theoretically. It is shown that the weak temperature variation measured for the radiative current density arises because the optical matrix element for excited state transitions is significantly smaller than for the ground state transition. In contrast, nonradiative Auger recombination can have a similar probability for transitions involving excited states as for those involving ground state carriers. The sharp increase in the threshold current density at high temperatures follows the temperature variation of the cubed threshold carrier density confirming that Auger recombination is the dominant recombination mechanism in these devices at room temperature.