Realization of homojunction PN AlN diodes
Realization of homojunction PN AlN diodes
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同质结PN AlN二极管的实现
DOI：
10.1063/5.0086314
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发表时间：
2022
影响因子：
3.2
通讯作者：
W. Doolittle
中科院分区：
文献类型：
--
作者：
H. Ahmad;Zachary Engel;C. Matthews;Sangho Lee;W. Doolittle
氮化铝（AlN）是一种绝缘体，通过杂质掺杂几乎没有希望转化为半导体。成功掺杂AlN的一些历史性挑战包括称为DX中心的可重构缺陷形成和随后的补偿，其导致掺杂剂活化能增加，导致非常少的电、电子或空穴载流子，从而使掺杂效率低下。使用晶体合成方法，产生较少的补偿杂质和较少的晶格膨胀，从而阻碍掺杂剂的重新配置，并使用新的掺杂剂，我们证明：（a）AlN中表现良好的体半导体功能，AlN是已知的最大的直接带隙半导体，具有（B）基本的体p型导电（空穴= 3.1 × 1018 cm-3，正如我们之前的工作中最近报道的那样），（c）n型体导电的显着改善（电子= 6 × 1018 cm-3，几乎是现有技术的6000倍），以及（d）PN AlN二极管，对于6.1 eV带隙半导体，其具有接近理想的10.6 V的导通电压。各种基于AlN的应用得以实现，这将影响基于深紫外光的病毒和细菌灭菌、聚合物固化、光刻、激光加工、高温、高压和高功率电子器件。
Aluminum nitride (AlN) is an insulator that has shown little promise to be converted to a semiconductor via impurity doping. Some of the historic challenges for successfully doping AlN include a reconfigurable defect formation known as a DX center and subsequent compensation that causes an increase in dopant activation energy resulting in very few carriers of electricity, electrons, or holes, rendering doping inefficient. Using crystal synthesis methods that generate less compensating impurities and less lattice expansion, thus impeding the reconfiguration of dopants, and using new dopants, we demonstrate: (a) well behaved bulk semiconducting functionality in AlN, the largest direct bandgap semiconductor known with (b) substantial bulk p-type conduction (holes = 3.1 × 1018 cm−3, as recently reported in our prior work), (c) dramatic improvement in n-type bulk conduction (electrons = 6 × 1018 cm−3, nearly 6000 times the prior state-of-the-art), and (d) a PN AlN diode with a nearly ideal turn-on voltage of ∼6 V for a 6.1 eV bandgap semiconductor. A wide variety of AlN-based applications are enabled that will impact deep ultraviolet light-based viral and bacterial sterilization, polymer curing, lithography, laser machining, high-temperature, high-voltage, and high-power electronics.