Impact of Electron-Impurity Scattering on the Spin Relaxation Time in Graphene: A First-Principles Study
Impact of Electron-Impurity Scattering on the Spin Relaxation Time in Graphene: A First-Principles Study
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DOI：
10.1103/physrevlett.110.156602
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发表时间：
2013-04-12
影响因子：
8.6
通讯作者：
Mertig, Ingrid
中科院分区：
文献类型：
--
作者：
Fedorov, Dmitry V.;Gradhand, Martin;Mertig, Ingrid
利用相对论从头计算方法研究了电子-杂质散射对石墨烯动量和自旋弛豫时间的影响。假设碳和硅吸附原子作为石墨烯中的天然杂质，我们能够模拟实验观察到的快速自旋弛豫。我们研究了弛豫时间对杂质位置的依赖关系，并表明C或Si吸附原子作为实空间自旋热点，诱导自旋翻转率比面内杂质大约5个数量级。这一事实证实了吸附原子诱导的自旋轨道耦合导致石墨烯中快速自旋弛豫的假设。DOI：10.1103/PhysRevLett.110.156602
The effect of electron-impurity scattering on momentum and spin relaxation times in graphene is studied by means of relativistic ab initio calculations. Assuming carbon and silicon adatoms as natural impurities in graphene, we are able to simulate fast spin relaxation observed experimentally. We investigate the dependence of the relaxation times on the impurity position and demonstrate that C or Si adatoms act as real-space spin hot spots inducing spin-flip rates about 5 orders of magnitude larger than those of in-plane impurities. This fact confirms the hypothesis that the adatom-induced spin-orbit coupling leads to fast spin relaxation in graphene. DOI: 10.1103/PhysRevLett.110.156602