Modification of sidewall roughness in silica deep etching and its influence on coupling loss in hybrid integration
Modification of sidewall roughness in silica deep etching and its influence on coupling loss in hybrid integration
复制标题
二氧化硅深刻蚀侧壁粗糙度的修改及其对混合集成耦合损耗的影响
DOI：
10.1117/12.468301
复制
发表时间：
2003
影响因子：
4.6
通讯作者：
Suntae Jung
中科院分区：
文献类型：
--
作者：
D. Choi;Joo;Dong Su Kim;Suntae Jung
本研究的目的是找到混合集成的深二氧化硅蚀刻工艺参数和响应之间的关系。工艺参数为晶片温度、氧气添加量、夹具材料和工艺压力。对这些参数的响应是侧壁粗糙度、蚀刻波导轮廓、蚀刻表面形态和临界尺寸变化。当工艺参数变化时，可以通过分析侧壁聚合物厚度和选择性来解释响应的变化。聚合物厚度与选择性也呈正相关。为了研究混合集成应用中决定波导端面与有源器件耦合效率的主要参数，对有深沟槽和无深沟槽的波导的传播损耗进行了测量和分析。
The objective of this study was to find the relationship between process parameters and responses in deep silica etching for hybrid integration. The process parameters were the wafer temperature, oxygen addition, clamp material and process pressure. The responses to these parameters were sidewall roughness, profile of etched waveguide, the morphology of etched surface and critical dimension change. When the process parameters were varied, the change in responses could be interpreted by analyzing sidewall polymer thickness and selectivity. Polymer thickness and selectivity also have positive correlation. To investigate which parameter is dominant in determining the coupling efficiency between waveguide end facet and active device in application for hybrid integration, the propagation loss of waveguide with or without deep trenches were measured and analyzed.