Oxygen Reduction on Rh(111) and Se-Modified Rh(111) Surfaces
Oxygen Reduction on Rh(111) and Se-Modified Rh(111) Surfaces
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Rh(111) 和 Se 修饰的 Rh(111) 表面的氧还原
DOI：
10.1007/s12678-017-0407-5
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发表时间：
2018
期刊：
影响因子：
3.1
通讯作者：
Helmut
中科院分区：
文献类型：
--
作者：
Shahid;Baltruschat;Helmut
研究了 Rh (111) 和 Se 吸附层修饰的 Rh (111) 的氧还原。在流通池中实现了受控的质量传递。在工作电极后面的第二个电极上检测到的过氧化氢在 Rh (111) 处含量仅为百分之几，而对于低 Se 覆盖率，在较高的覆盖度下其含量高达 40%。 Se 的小覆盖范围导致过电位降低 50 mV。在羟基还原峰正电位处，塔菲尔斜率达到 80 mV，在低于羟基还原峰的电位处，塔菲尔斜率接近 200 mV。这些值在 Se 修改后不会改变。 Se 覆盖度为 0.5（Se 原子/Rh 原子）时，氢吸附被完全抑制。此外，使用CO电荷置换法确定总零电荷点为0.2V。
Oxygen reduction is studied at Rh (111) and Rh (111) modified by a Se adlayer. Controlled mass transport was achieved in a flow through cell. Hydrogen peroxide, detected at a second electrode behind the working electrode, amounted to few percent at Rh (111) and for low Se coverages, at higher coverages it amounted up to 40%. Small coverages of Se lead to a decrease of the over potential by 50 mV. The Tafel slope amounts to 80 mV at potentials positive of the hydroxyl reduction peak and nearly 200 mV at potentials below. These values do not change after modification by Se. Hydrogen adsorption is completely suppressed for Se coverages of 0.5 (Se atoms per Rh atoms). In addition, the point of total zero charge was determined to be 0.2 V using the CO charge displacement method.