Etching silicon by SF6 in a continuous and pulsed power helicon reactor
Etching silicon by SF6 in a continuous and pulsed power helicon reactor
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DOI：
10.1116/1.1575215
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发表时间：
2003-07-01
影响因子：
2.9
通讯作者：
Boswell, RW
中科院分区：
文献类型：
--
作者：
Herrick, A;Perry, AJ;Boswell, RW
在螺旋反应器中测量了SF6对硅的蚀刻速率，同时对气相中氟原子的浓度进行了放光测量，测量了各种气体流速导致的mTorr范围内的压力。在基板上施加偏置射频功率，研究离子能量对蚀刻速率的影响。发现蚀刻速率与氟浓度成正比，与较高气体流速的偏置无关。然而，在低流速下，情况更加复杂，没有一个简单的模型可以解释这些测量结果。在重复脉冲放电的余辉中也测量了蚀刻速率，使定向离子能量在等离子体电位快速坍缩后减少为热运动。建立了一个简单的模型来解释氟原子寿命方面的时间蚀刻现象。(C) 2003年美国真空学会。
The etch rate of silicon by SF6 in a helicon reactor has been measured along with simultaneous actinometric measurements of the concentration of atomic fluorine in the gas phase for a variety of gas flow rates resulting in pressures in the mTorr range. A bias rf power was applied to the substrate to investigate the effect of ion energy on the etch rate. The etch rate was found to be proportional to the fluorine concentration and independent of the bias for the higher gas flow rates. However, at lower flow rates, the situation was more complicated and no simple model can explain the measurements. Measurements of the etch rate were also made in the afterglow of a repetitively pulsed discharge so that the directed ion energy would be reduced to the thermal motion after the rapid collapse of the plasma potential. A simple model was developed to explain the temporal etching phenomena in terms of the lifetime of the atomic fluorine. (C) 2003 American Vacuum Society.