Electrochemical-Etching Approach to Achieving Ultrathin FeSe Films
Electrochemical-Etching Approach to Achieving Ultrathin FeSe Films
复制标题
DOI：
10.1380/jsssj.37.541
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
J. Shiogai;T. Nojima;A. Tsukazaki
中科院分区：
文献类型：
--
作者：
J. Shiogai;T. Nojima;A. Tsukazaki
双电层晶体管（EDLT）作为一种有用的工具，凭借其巨大的电容，在二维（2D）材料表面诱导和控制许多令人着迷的物理特性，近十年来引起了人们的关注。本文重点介绍了 EDLT 的另一个方面：电化学反应作为实现超薄膜的方法。精确调节离子液体与固体表面之间的电化学蚀刻反应性，使得逐层剥离二维材料成为可能。该技术应用于 EDLT 中的铁基超导体 FeSe，以观察超薄膜形式的高温超导性。
Electric double layer transistor (EDLT) has attracted attentions over the decade as a useful tool to induce and control fascinating many physical properties at two dimensional (2D) materials surface based on its giant capacitance. This paper highlights another aspect of EDLT : electrochemical reaction as a method to achieve ultrathin films. Precise tuning of reactivity of electrochemical etching between ionic liquid and solid surface makes it possible to peel off 2D materials layer-by-layer. This technique was applied to an iron-based superconductor FeSe in EDLT towards the observation of high temperature superconductivity in ultra-thin film form.