Growing Cobalt Triantimonide Using Vertical Bridgman Method and Effects of Post Annealing
Growing Cobalt Triantimonide Using Vertical Bridgman Method and Effects of Post Annealing
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垂直布里奇曼法生长三锑钴及后退火的影响
DOI：
10.1557/proc-646-n5.34.1
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
S. Sakuragi
中科院分区：
文献类型：
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作者：
M. Akasaka;G. Sakuragi;H. Suzuki;T. Iida;Y. Takanashi;S. Sakuragi
使用垂直布里奇曼法以0.4至2.8毫米/小时的生长速率生长CoSb 3 晶体。对生长样品和退火后样品的热电特性进行了分析。得到Sb包围的多晶CoSb3。以 0.4 mm/h 速率生长的样品比以 2.8 mm/h 速率生长的样品具有更大的 CoSb3 晶粒。对于生长的样品，塞贝克系数小于 200 μ/K，这是一个标称值 [1-3]。残留锑的存在导致塞贝克系数降低和样品电导率增加。随后在 800 °C 下热处理 20 小时消除了残留的 Sb，导致退火样品中的塞贝克系数（范围 > 200 μV/K）与生长样品相比显着增加。生长速率较高的样品在退火后具有较大的塞贝克系数，约为 500 μ/K。
Crystals of CoSb 3 were grown using the vertical Bridgman method at growth rates that varied from 0.4 to 2.8 mm/h. Thermoelectric properties were analyzed for both as-grown and post-annealed samples. Polycrystalline CoSb3 surrounded by Sb was obtained. Samples grown at the rate of 0.4 mm/h had larger CoSb3 grains than samples grown at the 2.8 mm/h rate. For the as-grown samples, the Seebeck coefficient was smaller than 200 μ/K, which is a nominal value [1–3]. The presence of residual Sb resulted in a decrease in the Seebeck coefficient and an increase in the samples' electrical conductivity. A subsequent heat treatment at 800 °C for 20 h eliminated the residual Sb, resulting in a significant increase in the Seebeck coefficients (ranging from > 200 μV/K) in the annealed samples, as compared with the as-grown samples. The samples with a higher growth rate had larger Seebeck coefficients of ∼500 μ/K after annealing.