GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate
GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate
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DOI：
10.1143/apex.4.021001
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发表时间：
2011-02-01
影响因子：
2.3
通讯作者：
Amano, Hiroshi
中科院分区：
文献类型：
--
作者：
Kuwahara, Yousuke;Fujii, Takahiro;Amano, Hiroshi
利用两种不同的GaInN超晶格结构的组合，获得了具有高开路电压、高短路电流密度和良好填充因子的高性能GaInN基太阳能电池。两种超晶格结构中的 GaInN 势垒厚度（3 和 0.6 nm）均经过优化，从而在器件中形成具有低凹坑密度的厚 GaInN 基有源层。在空气质量1.5G、辐照强度155mW/cm(2)的太阳模拟器下，转换效率约为2.5%。 (C) 2011 日本应用物理学会
High-performance GaInN-based solar cells with high open-circuit voltage, high short-circuit current density, and good fill factor have been obtained using a combination of two different GaInN superlattice structures. The GaInN barrier thicknesses (3 and 0.6 nm) in both superlattice structures were optimized, resulting in a thick GaInN-based active layer with a low pit density in the device. The conversion efficiency is approximately 2.5% under a solar simulator of air mass 1.5G and an irradiation intensity of 155mW/cm(2). (C) 2011 The Japan Society of Applied Physics