Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer
Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer
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DOI：
10.1063/1.2747216
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发表时间：
2007-06-15
影响因子：
3.2
通讯作者：
Ozbay, E.
中科院分区：
文献类型：
--
作者：
Corekci, S.;Ozturk, M. K.;Ozbay, E.
采用金属有机化学气相沉积方法在蓝宝石(Al_2O_3)衬底和AlN缓冲层/Al_2O_3模板上生长了AlxGa1-xN/GaN(x类似0.3)异质结。用高分辨X射线衍射、椭圆偏振光谱、原子力显微镜和光致发光测量研究了生长在Al_2O_3衬底上的AlN缓冲层和生长在AlGaN三元层下的AlN IL对异质结的结构、形貌和光学性质的影响。AlN BL改善了AlGaN Tl的晶体质量。通过在GaN BL和AlGaN TL之间插入AlN IL实现了进一步的改进。然而，实验结果也表明，高温AlN IL导致AlGaN TL表面相对粗糙，AlN IL使AlGaN TL中的应变从拉伸变为压缩。此外，AlN-BL还改善了异质结的顶面质量。(C)2007年美国物理研究所。
AlxGa1-xN/GaN (x similar to 0.3) heterostructures with and without a high-temperature (HT) AlN interlayer (IL) have been grown on sapphire (Al2O3) substrates and AlN buffer/Al2O3 templates by metal organic chemical vapor deposition. The effects of an AlN buffer layer (BL) grown on an Al2O3 substrate and an AlN IL grown under the AlGaN ternary layer (TL) on structural, morphological, and optical properties of the heterostructures have been investigated by high-resolution x-ray diffraction, spectroscopic ellipsometry, atomic force microscopy, and photoluminescence measurements. The AlN BL improves the crystal quality of the AlGaN TL. Further improvement is achieved by inserting an AlN IL between GaN BL and AlGaN TL. However, experimental results also show that a HT AlN IL leads to relatively rough surfaces on AlGaN TLs, and an AlN IL changes the strain in the AlGaN TL from tensile to compressive type. In addition, an AlN BL improves the top surface quality of heterostructures. (c) 2007 American Institute of Physics.