Quasi-optical watt-level millimeter-wave monolithic solid-state diode-grid frequency multipliers

Quasi-optical watt-level millimeter-wave monolithic solid-state diode-grid frequency multipliers
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准光学瓦特级毫米波单片固态二极管栅极倍频器

DOI：
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发表时间：
1989
期刊：
IEEE MTT-S International Microwave Symposium Digest
影响因子：
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通讯作者：
B. Hancock
B. Hancock
中科院分区：
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文献类型：
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作者：
R. J. Hwu;L. Sadwick;N. Luhmann;D. Rutledge;M. Sokolich;B. Hancock

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单片平面阵列包含数千个GaAs势垒本征n/sup +/二极管在100 GHz的三倍频配置产生1-W的输出功率。三倍频效率为8.5%，已获得约4 mW的入射功率在每个二极管，在良好的协议与预测的大信号非线性电路分析的倍频。器件的性能受到所制造的二极管的参数的限制。预期通过可实现的二极管参数和优化的泵浦条件，将有显著的改善。&lt;<ETX>&gt;
A monolithic planar array containing thousands of GaAs barrier-intrinsic-n/sup +/ diodes have produced 1-W output power at 100 GHz in a tripler configuration. Tripling efficiency of 8.5% has been obtained from approximately 4-mW incident power on each diode, in excellent agreement with the predictions of large-signal nonlinear circuit analysis of frequency multiplication. The device performance is limited by the parameters of the fabricated diodes. Significant improvement is expected with realizable diode parameters and optimized pumping condition.<<ETX>>