Generation and Focusing of Intense Ion Beams with an Inverse Pinch Ion Diode
Generation and Focusing of Intense Ion Beams with an Inverse Pinch Ion Diode
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使用反夹离子二极管产生和聚焦强离子束
DOI：
10.1143/jjap.31.1922
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发表时间：
1992
影响因子：
1.5
通讯作者：
Sadao Nobuhara Sadao Nobuhara
中科院分区：
文献类型：
--
作者：
Y. Hashimoto;Morihiko Sato;Mitsuyasu Yatsuzuka Mitsuyasu Yatsuzuka;Sadao Nobuhara Sadao Nobuhara
本文研究了用平板阳极反箍缩离子二极管产生和聚焦离子束。反箍缩离子二极管产生的离子束被发现集中在120毫米从阳极的静电场在二极管。离子束的能量和最大电流密度分别为180 keV和420 A/cm 2。离子束的聚焦角为4.3 °。光束亮度估计为1.3 GW/cm 2·rad 2。离子束的聚焦距离可以通过改变阳极和阴极的直径来控制。
Generation and focusing of ion beams using an inverse pinch ion diode with a flat anode has been studied. The ion beams generated with the inverse pinch ion diode were found to be focused at 120 mm from the anode by the electrostatic field in the diode. The energy and maximum current density of the ion beams were 180 keV and 420 A/cm2, respectively. The focusing angle of the ion beams was 4.3°. The beam brightness was estimated to be 1.3 GW/cm2·rad2. The focusing distance of the ion beams was found to be controllable by changing the diameters of the anode and cathode.